▎ 摘　　要

We present numerical studies of conduction in graphene nanoribbons with reconstructed edges based on the standard tight-binding model of the graphene and the extended Huckel model of the reconstructed defects. We performed atomic geometry relaxation of individual defects using density functional theory and then explicitly calculated the tight-binding parameters used to model electron transport in graphene with reconstructed edges. The calculated conductances reveal strong backscattering and electron-hole asymmetry depending on the edge and defect type. This is related to an additional defect-induced band whose wave function is poorly matched to the propagating states of the pristine ribbon. We find a transport gap to open near the Dirac point and to scale inversely with the ribbon width, similarly to what has been observed in experiments. We predict the largest transport gap to occur for armchair edges with Stone-Wales defects, while heptagon and pentagon defects cause about equal backscattering for electrons and holes, respectively. Choosing the heptagon defect as an example, we show that although electron interactions in the Hartree approximation cause accumulation of charge carriers on the defects, surprisingly, their effect on transport is to reduce carrier backscattering by the defects and thus to enhance the conductance.