• 文献标题:   Biased driven resonant tunneling through a double barrier graphene based structure
  • 文献类型:   Article
  • 作  者:   BISWAS R, MUKHOPADHYAY S, SINHA C
  • 作者关键词:   resonant tunneling, applied bia, conductivity
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:   PK Coll
  • 被引频次:   21
  • DOI:   10.1016/j.physe.2010.01.048
  • 出版年:   2010

▎ 摘  要

The effects of the external homogeneous electric field on the transmission coefficient and the ballistic conductance are studied theoretically for an electron across a graphene double barrier structure. The Klein transmission is noted for the normal to near normal incidence only. The electrons are found to be confined by the external static electric field for the glancing incidence and not for the normal incidence. Although the conductance profile for the lower barrier widths is almost sinusoidal in nature, some interesting features occur for the higher barrier width of the structure. The oscillations in the below barrier conductance are greatly suppressed by the external field. Some negative differential conducting regions are also noted, being quite sensitive to the Fermi energy of the system. (C) 2010 Elsevier B.V. All rights reserved.