▎ 摘　　要

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R-12,R-43 approximate to-170 , which is measured in a nonlocal, four-terminal configuration at 4.2 Kappa and which vanishes as the temperature is increased above 80 K.