1. 平台首页
  2. 国际论文信息
  • 文献标题:   Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001)
  • 文献类型:   Article
  • 作　　者:   MAO JH, HUANG L, PAN Y, GAO M, HE JF, ZHOU HT, GUO HM, TIAN Y, ZOU Q, ZHANG LZ, ZHANG HG, WANG YL, DU SX, ZHOU XJ, CASTRO NETO AH, GAO HJ
  • 作者关键词:   conduction band, elemental semiconductor, graphene, intercalation compound, monolayer, photoelectron spectra, scanning tunnelling microscopy, scanning tunnelling spectroscopy, semiconductor epitaxial layer, semiconductorinsulator boundarie, silicon, valence band
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   83
  • DOI:   10.1063/1.3687190
  • 出版年:   2012

▎ 摘　　要

We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized by scanning tunneling microscopy/spectroscopy and angle resolved electron photoemission spectroscopy. These experiments show high structural and electronic qualities of this new composite. The SIA allows for an atomic control of the distance between the graphene and the metal substrate that can be used as a top gate. Our results show potential for the next generation of graphene-based materials with tailored properties. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3687190]