▎ 摘　　要

By using the nonequilibrium Green function method, the photon-assisted electron transport through a graphene-based device similar to STM model is studied theoretically and numerically. The device is composed of a single central site (quantum dot) modulated by an oscillating electric field, a one-dimensional quantum wire and a two-dimensional graphene sheet. Some interesting results on transmission probability and current voltage (I-V) characteristics of the device are given in this paper. In the presence of an oscillating electric field, we find that besides the central two transmission peaks caused by graphene part, there appear photon-assisted peaks which are distributed on both sides of the Fermi level. The positions of the photon-assisted peaks are linear to the frequency of the oscillating electric field, and the widths of the photon-assisted peaks are relevant to the amplitude of the oscillating electric field. It is found that the current voltage graphs exhibit step growth due to the existence of photon-assisted tunneling. We hope these results may have guidance meaning for the fabrication of optoelectronic devices.