• 文献标题:   Quantum pumping of valley current in strain engineered graphene
  • 文献类型:   Article
  • 作  者:   WANG J, CHAN KS, LIN ZJ
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   City Univ Hong Kong
  • 被引频次:   34
  • DOI:   10.1063/1.4861119
  • 出版年:   2014

▎ 摘  要

We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices. (C) 2014 AIP Publishing LLC.