▎ 摘　　要

By inserting a lightly doped region between the highly doped drain and the intrinsic channel of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new lightly doped drain (LDD)-GNR-TFET. Transport characteristics of the proposed transistor is numerically simulated, employing the third-nearest-neighbor tight-binding approximation in mode space non-equilibrium Green's function formulism (NEGF), in ballistic regime. Simulations show, in comparison with a conventional GNR-TFET of the same dimensions, the proposed LDD-GNR-TFET exhibits a 10(2)-10(3) times smaller OFF-current, an up to 10(5) times larger ON/OFF ratio, a shorter time delay, a smaller power-delay product (PDP) and a less drain induced barrier thinning (DIBT), besides preserving the subthreshold swing. (C) 2014 Elsevier Ltd. All rights reserved.