▎ 摘　　要

Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (V (OC)) and short-circuit current density (J (SC)) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the V (OC) of both systems are investigated. The V (OC) for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the V (OC) for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The J (SC) for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm(-2) and 4.78 mAcm(-2), respectively, whereas the J (SC) for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm(-2) and 6.68 mAcm(-2), respectively. These results are in good agreement with the reported experimental work.