• 文献标题:   Amplitude and Frequency Modulation With an On-Chip Graphene-Based Plasmonic Terahertz Nanogenerator
  • 文献类型:   Article
  • 作  者:   CRABB J, CANTOSROMAN X, AIZIN GR, JORNET JM
  • 作者关键词:   modulation, plasmon, graphene, frequency modulation, logic gate, modfet, hemt, graphene transistor, dyakonovshur instability, thz modulation, plasmonic
  • 出版物名称:   IEEE TRANSACTIONS ON NANOTECHNOLOGY
  • ISSN:   1536-125X EI 1941-0085
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1109/TNANO.2022.3208084
  • 出版年:   2022

▎ 摘  要

Terahertz communication is envisioned as a key technology not only for the next generation of macro-scale networks (e.g., 6G), but also for transformative networking applications at the nanoscale (e.g., wireless nanosensor networks and wireless networks on chip). In this paper, an on-chip THz nano-generator with amplitude and frequency modulation capabilities is presented. The proposed device uses and leverages the tunability of the Dyakonov-Shur instability for the growth and modulation of plasmonic oscillations in the two-dimensional electron gas channel of a graphene-based high-electron-mobility transistor. An in-house developed finite-element-methods platform, which self-consistently solves the hydrodynamic model and Maxwell's equations, is utilized to provide extensive numerical results demonstrating the device's functionality along with ultra-wide bandwidth and high modulation index capabilities.