▎ 摘　　要

We report on the realization of 10 quantum Hall devices in series fabricated using epitaxial graphene on silicon carbide. Precision measurements with a resistance bridge indicate that the quantized Hall resistance across an array at a filling factor of 2 is equivalent to 5he2 within the measurement uncertainty of approximately 4x10(-8). A quantum Hall phase diagram for the array shows that a metrological quantization of 5he2can be achieved at the magnetic field of 6T and a temperature of 4K. This experiment demonstrates the possibility of timely unchangeable resistance reference in various ranges in relaxed experimental conditions. (C) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).