▎ 摘　　要

The electron-beam-induced current (EBIC) method is utilized in this work to visualize conductive channels formed in graphene oxide as a result of resistive switching. Using metal-insulator-semiconductor (MIS) structures, an increase in the electron beam induced current by a few orders of magnitude as compared with the EBIC signal in metal-insulator-metal (MIM) structures is achieved. The mechanism of the EBIC image formation related to the conductive channels is explained by the separation and collection of the e-beam generated excess carriers by rectifying barrier nanocontacts formed at the graphene oxide/Si interface during resistive switching. It is shown that the collection efficiency of the formed nanocontacts decreases with the beam energy, in agreement with the theoretical predictions for the Schottky-like nanocontacts. An important advantage of the EBIC method is demonstrated in its ability to monitor the generation and elimination of high density conductive channels even when the current-voltage measurements cannot detect and separate these processes. EBIC study of the dynamics of the conductive channel formation can help better understand the underlying physical mechanisms of their generation.