• 文献标题:   Carrier scattering and impact ionization in bilayer graphene
  • 文献类型:   Article
  • 作  者:   SAEIDMANESH M, GHADIRY MH, KHALEDIAN M, KIANI MJ, ISMAIL R
  • 作者关键词:   bilayer graphene, drift velocity, scattering rate, lucky drift, ionization
  • 出版物名称:   JOURNAL OF COMPUTATIONAL ELECTRONICS
  • ISSN:   1569-8025
  • 通讯作者地址:   Univ Technol Malaysia
  • 被引频次:   7
  • DOI:   10.1007/s10825-013-0497-0
  • 出版年:   2014

▎ 摘  要

Transport properties of carriers in bilayer graphene (BLG) were studied. Several analytical models were developed for drift velocity, scattering rate and ionization coefficient of BLG for the first time. Then, the joint effect of temperature and potential difference of layers were addressed on the modeled parameters. The accuracy of the proposed models for drift velocity and scattering rate was verified by the simulation results of published works. In addition, the analytical results of ionization coefficient of BLG were compared with those of silicon.