▎ 摘　　要

In this work, reduced graphene oxide (rGO) was synthesized using a modified Hummer method and its morphological and structural properties were investigated using transmission electron microscopy (TEM), high-resolution TEM (HR-TEM) and X-ray diffraction (XRD). The rGO was used as the hole transport buffer layer (HTBL) and poly(ethylene oxide) (PEO) was used as the electron transport buffer layer (ETBL) for the vacuum-free quantum dot planar hybrid (VFQPH) solar cells (SCs) fabrication. PbS quantum dots (Qdots) were prepared using a hot-injection method, which was used as the p-type material and PCBM ([6,6]-Phenyl-C61-butyric acid methyl ester) was used as the n-type material. The effects of the hole transport buffer layer and electron transport buffer layer on the morphological and electrical properties of the device were investigated. A device with a structure of glass/indium tin oxide (ITO)/HTBL/PbS: PCBM/ETBL/E-GaIn was fabricated and the maximum power conversion efficiency of about 4.34% was obtained.