▎ 摘　　要

Graphene oxide quantum dots (GOQDs) are integrated with a charge trapping layer in a nonvolatile charge trapping memory. The device structures of Pd/SiO2/ZHO/SiO2/Si and Pd/SiO2/ZHO/GOQDs/SiO2/Si are fabricated, measured, and compared. The GOQD-embedded device demonstrates improved memory window size and data retention characteristics. Under a gate sweeping voltage of +/- 5 V, the memory window of a GOQD-embedded device is 1.67 V, which is 35.7% larger than the same device without using GOQDs. After a retention time of 1.08 x 10(4) s, the GOQD-embedded device shows only 1.2% and 3.8% decay in the high-state and low-state capacitances, respectively. The data retention loss of a GOQD-embedded device is reduced by at least 65% when compared to its counterpart, respectively.