• 文献标题:   Charge stabilization of shallow nitrogen-vacancy centers using graphene/diamond junctions
  • 文献类型:   Article
  • 作  者:   HARUYAMA M, OKIGAWA Y, OKADA M, NAKAJIMA H, OKAZAKI T, KATO H, MAKINO T, YAMADA T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1063/5.0143062
  • 出版年:   2023

▎ 摘  要

We studied the charge-state stabilization of shallow nitrogen-vacancy (NV) centers in (111) diamond using graphene/diamond junctions. Measurement of the fluorescence stability and evaluation of the charge-state stability were conducted on the NV centers at the graphene and the graphene-free region. The results revealed that about half of the total NV centers (NV0 + NV-) at the graphene-free region were unstable, while over 90% of the measured NV centers at the graphene region were stabilized as NV- centers. Graphene/diamond junctions contribute significantly to charge-state stabilization of shallow NV- centers in (111) diamond. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).