▎ 摘　　要

Using a model based on the generalized tight-binding approximation, we find that folded graphene possesses an asymmetrical energy band around the Fermi level. The interlayer interaction and the closed boundary condition imposed on one edge of the graphene layers induce the unusual asymmetrical electronic structure in folded graphene. Our calculations also show that the electronic structure of folded graphene strongly depends on the interlayer atomic displacement, with the resulting materials ranging from metals to semiconductors. The asymmetrical electronic structure in folded graphene causes a different distribution of occupied and unoccupied electron states around the Fermi level which should be corroborated by scanning tunneling microscope experiments.