• 文献标题:   Gapless insulator and a band gap scaling law in semihydrogenated graphene
  • 文献类型:   Article
  • 作  者:   WRIGHT AR, O BRIEN TE, BEAVEN D, ZHANG C
  • 作者关键词:   energy gap, graphene, hydrogenation, optical conductivity, semiconductor material, tightbinding calculation
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Wollongong
  • 被引频次:   7
  • DOI:   10.1063/1.3469941
  • 出版年:   2010

▎ 摘  要

We demonstrate two unusual electronic properties of semihydrogenated graphene with variable sized A- or B-hydrogenated domains within the tight-binding formalism as follows: (i) a universal band gap scaling law which states that the band gap depends linearly upon the ratio of the number of A- to B-hydrogenated atoms, N-A/N-B, reaching zero gap at N-A=N-B, but independent of the domain size, and (ii) an insulating state with zero band gap at N-A=N-B, a rare phenomenon in nature. We confirm this gapless insulator state by the zero optical conductance at low frequencies. (C) 2010 American Institute of Physics. [doi:10.1063/1.3469941]