▎ 摘　　要

A one-step in-situ route to free standing core-shell silicon carbide in graphene nanoparticles on monolayer graphene is presented. The core-shell SiC@Graphene nanoparticle growth is realized by a simple chemical vapor deposition (CVD) process where carbon and silica precursors are simultaneously introduced into the growth chamber. This process permits the synthesis of a monolayer graphene sheet dressed with silicon carbide nanoparticles in a single CVD step, with the product controlled by growth temperature and the carbon/SiO2 exposure time. Growth of a high density SiC@Graphene distribution on a continuous graphene layer requires long exposure times (> 1 h) and high temperature (1000 degrees C). The growth process proceeds by a carbothermal mechanism. The simultaneous growth of graphene and SiC nanoparticles enables uniform core-shell SiC@Graphene nanoparticle formation rather than SiC/carbon nanofiber growth. As a proof of concept, the functionalization of preformed nanoparticle graphene surface with a diazonium salt is studied, demonstrating an increase in grafting rate with increasing nanoparticle population. This work provides a general procedure for one-step synthesis, with further investigation required to develop precursors for hybrid core-shell CVD material growth.