▎ 摘　　要

The selective hole nature of MoOx is described by its high-level work function, which creates band alignment at the MoO3-Si heterointerface that turns the surface to inversion. However, its low conductivity and carrier concentration hinder the material predicted theoretical efficiency. Attempts to enhance the performance of the MoO3 was made by doping graphene oxides (GO) using the spray pyrolysis technique. The GO doping concentrations were varied in the range of 0-3 wt %. The properties of the pure MoO3 and chemically GO-doped MoO3 films were analyzed, and the efficiency variations and stability of the pure and GO-doped MoO3/n-Si solar cells were presented. The films doped with 2 % GO showed a higher concentration of 7.41 x 10(19) cm(-3) and a low resistivity of 40.16 Omega cm. This attributed to the improvement of the solar cell's parameters with, V-oc = 484.34 mV, J(sc) = 10.12 mA/cm(2), FF = 66.21 % and eta = 3.26 %.