• 文献标题:   Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30 degrees Twisted Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   SUZUKI T, IIMORI T, AHN SJ, ZHAO YH, WATANABE M, XU JD, FUJISAWA M, KANAI T, ISHII N, ITATANI J, SUWA K, FUKIDOME H, TANAKA S, AHN JR, OKAZAKI K, SHIN S, KOMORI F, MATSUDA I
  • 作者关键词:   graphene, interface, quasicrystal, valleytronic, ultrafast dynamic, optoelectronic
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   8
  • DOI:   10.1021/acsnano.9b06091
  • 出版年:   2019

▎ 摘  要

Ultrafast carrier dynamics in a graphene system are very important in terms of optoelectronic devices. Recently, a twisted bilayer graphene has been discovered that possesses interesting electronic properties owing to strong modifications in interlayer couplings. Thus, a better understanding of ultrafast carrier dynamics in a twisted bilayer graphene is highly desired. Here, we reveal the unbalanced electron distributions in a quasicrystalline 30 degrees twisted bilayer graphene (QCTBG), using time- and angle-resolved photoemission spectroscopy on the femtosecond time scale. We distinguish time-dependent electronic behavior between the upper- and lower-layer Dirac cones and gain insight into the dynamical properties of replica bands, which show characteristic signatures due to Umklapp scatterings. The experimental results are reproduced by solving a set of rate equations among the graphene layers and substrate. We find that the substrate buffer layer plays a key role in initial carrier injections to the upper and lower layers. Our results demonstrate that QCTBG can be a promising element for future devices.