▎ 摘　　要

Potential applications of graphene-based materials in nanoscale electronic devices depends heavily on the versatility of synthesis and modification methods. The significant trend of graphene materials production is based on laser-induced synthesis. In this work, we investigate the laser-induced formation of graphene layers in pinewood by utilising near-infrared picosecond (10 ps) and nanosecond (10 ns) pulses. Effect of laser irradiation dose and pulse duration time on the quality of graphene materials was comparatively evaluated. Raman measurements showed the formation of high-quality few-layer graphene structures with I(2D)/I(G) and I(D)/I(G) ratios of 1.10 and 0.69, respectively, at the nanosecond-laser irradiation dose of 662 J cm(-2). The average in-plane crystallite size estimated from the Raman data was found to be 31 nm. Sheet resistance measurements showed a correlation with Raman data and revealed a significant decrease in electric resistance for the ns-laser prepared sample with the highest I(2D)/I(G) ratio. To get insight into the graphene formation mechanism, we performed modelling of the pinewood surface temperature after the laser pulse irradiation. Higher surface temperatures reached and ablation process during picosecond laser irradiation disturb crystalline lattice structure forming lower-quality graphene platelets. We found that the nanosecond laser produces less defected graphene layers.