• 文献标题:   CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications
  • 文献类型:   Review
  • 作  者:   KHAN A, KUMAR RR, CONG JK, IMRAN M, YANG DR, YU XG
  • 作者关键词:   cvdgraphene, texturedsi, detector, energy generation, energy storage, solar cell
  • 出版物名称:   ADVANCED MATERIALS INTERFACES
  • ISSN:   2196-7350
  • 通讯作者地址:  
  • 被引频次:   6
  • DOI:   10.1002/admi.202100977 EA NOV 2021
  • 出版年:   2022

▎ 摘  要

Integration of chemical vapor deposited (CVD) graphene with textured-Si substrates is an emerging research area wide open. Graphene can serve as both a transparent top electrode and a charge-separating/transport-active layer. However, its low light absorption capability, and high reflectance of planar-Si substrate are major concerns for light harvesting required for photovoltaic devices especially solar cells and photodetectors (PDs). Therefore, CVD-graphene/textured-Si heterostructure effectively addresses this problem as the textured-Si provides more surface area for light harvesting by suppressing light reflection and enables the efficient charge separation/transport as well. Recently, CVD-graphene/textured-Si Schottky junction based high performance solar cells and PDs have successfully been demonstrated. Moreover, the graphene coating on textured-Si enhances the conductivity of Si anodes and provides structural stability for lithium-ion batteries (LIBs). Furthermore, the optoelectronic coupled interfacial properties in such heterostructures suitably construct the platforms for surface enhanced Raman scattering (SERS) based detection and photocathodes for H-2-production, respectively. Hence, in this review, the fabrication of various CVD-graphene/textured-Si heterostructures and their applications in solar cells, PDs, SERS, LIBs, and H-2-production are critically analyzed with respect to the synergistic effect of Si-texturing, electronic/optoelectronic properties of CVD-graphene, etc. Finally, conclusions and outlook of this rapidly emerging and technologically broad research area are presented.