• 文献标题:   Two-band induced superconductivity in single-layer graphene and topological insulator bismuth selenide
  • 文献类型:   Article
  • 作  者:   TALANTSEV EF, CRUMP WP, TALLON JL
  • 作者关键词:   graphene, bismuth selenide, josephson junction, ambegaokarbaratoff model, superconducting gap, josephson current
  • 出版物名称:   SUPERCONDUCTOR SCIENCE TECHNOLOGY
  • ISSN:   0953-2048 EI 1361-6668
  • 通讯作者地址:   Victoria Univ Wellington
  • 被引频次:   3
  • DOI:   10.1088/1361-6668/aa9800
  • 出版年:   2018

▎ 摘  要

Proximity-induced superconductivity in single-layer graphene (SLG) and in topological insulators represent almost ideal examples of superconductivity in two dimensions. Fundamental mechanisms governing superconductivity in the 2D limit are of central interest for modern condensed-matter physics. To deduce fundamental parameters of superconductor/graphene/superconductor and superconductor/bismuth selenide/superconductor junctions we investigate the self-field critical currents in these devices using the formalism of the Ambegaokar-Baratoff model. Our central finding is that the induced superconducting state in SLG and bismuth selenide each exhibits gapping on two superconducting bands. Based on recent results obtained on ultra-thin films of natural superconductors, including single-atomic layer of iron selenide, double and triple atomic layers of gallium, and several atomic layer tantalum disulphide, we conclude that a two-band induced superconducting state in SLG and bismuth selenide is part of a wider, more general multiple-band phenomenology of currently unknown origin.