• 文献标题:   Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons
  • 文献类型:   Article
  • 作  者:   BETTI A, FIORI G, IANNACCONE G
  • 作者关键词:   defect, edge roughnes, graphene nanoribbon, impuritie, lowfield mobility, phonon, scattering
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Univ Pisa
  • 被引频次:   28
  • DOI:   10.1109/TED.2010.2100045
  • 出版年:   2011

▎ 摘  要

We have investigated the main scattering mechanisms affecting the mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects, and ionized impurities, and we have defined a methodology based on simulations of statistically meaningful ensembles of nanoribbon segments. Edge disorder heavily affects the mobility at room temperature in narrower nanoribbons, whereas charged impurities and phonons are hardly the limiting factors. Results are favorably compared with the few experiments available in the literature.