• 文献标题:   All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures
  • 文献类型:   Article
  • 作  者:   SHI JP, LIU MX, WEN JX, REN XB, ZHOU XB, JI QQ, MA DL, ZHANG Y, JIN CH, CHEN HJ, DENG SZ, XU NS, LIU ZF, ZHANG YF
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Peking Univ
  • 被引频次:   65
  • DOI:   10.1002/adma.201503342
  • 出版年:   2015

▎ 摘  要

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2/Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.