▎ 摘　　要

The intercalation and deintercalation mechanisms of Si deposited on monolayer graphene grown on SiC(0001) substrates and after subsequent annealing steps are investigated using low-energy electron microscopy (LEEM), photoelectron spectroscopy (PES), and micro-low-energy electron diffraction (mu-LEED). After Si deposition on samples kept at room temperature, small Si droplets are observed on the surface, but no intercalation can be detected. Intercalation is revealed to occur at an elevated temperature of about 800. C. The Si is found to migrate to the interface region via defects and domain boundaries. This observation may provide an answer to the problem of controlling homogeneous bi-/multilayer graphene growth on nearly perfect monolayer graphene samples prepared on SiC(0001). Likewise, Si penetrates more easily small monolayer graphene domains because of the higher density of domain boundaries. Upon annealing at 1000-1100 degrees C, formation of SiC on the surface is revealed by the appearance of a characteristic surface state located at about 1.5 eV below the Fermi level. A streaked mu-LEED pattern is also observed at this stage. The SiC formed on the surface is found to decompose again after annealing at temperatures higher than 1200 degrees C.