• 文献标题:   Spin-valley coupling and spin-relaxation anisotropy in all-CVD Graphene-MoS2 van der Waals heterostructure
  • 文献类型:   Article
  • 作  者:   HOQUE AM, RAMACHANDRA V, GEORGE A, NAJAFIDEHAGHANI E, GAN ZY, MITRA R, ZHAO B, KHOKHRIAKOV D, TURCHANIN A, LARAAVILA S, KUBATKIN S, DASH SP
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW MATERIALS
  • ISSN:   2475-9953
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevMaterials.7.044005
  • 出版年:   2023

▎ 摘  要

Two-dimensional (2D) van der Waals (vdW) heterostructures fabricated by combining 2D materials with unique properties into one ultimate unit can offer a plethora of fundamental phenomena and practical appli-cations. Recently, proximity-induced quantum and spintronic effects have been realized in heterostructures of graphene (Gr) with 2D semiconductors and their twisted systems. However, these studies are so far limited to exfoliated flake-based devices, limiting their potential for scalable practical applications. Here, we report spin-valley coupling and spin-relaxation anisotropy in Gr-MoS2 heterostructure devices prepared from scalable chemical vapor-deposited (CVD) 2D materials. Spin precession and dynamics measurements reveal an enhanced spin-orbit coupling strength in the Gr-MoS2 heterostructure in comparison with pristine Gr at room temperature. Consequently, large spin-relaxation anisotropy is observed in the heterostructure, providing a method for spin fil-tering due to spin-valley coupling. These findings open a scalable platform for all-CVD 2D vdW heterostructures design and their device applications.