• 文献标题:   Extenuated interlayer scattering in double-layered graphene/hexagonal boron nitride heterostructure
  • 文献类型:   Article
  • 作  者:   JAIN N, YANG F, JACOBSGEDRIM RB, XU X, ANANTRAM MP, YU B
  • 作者关键词:  
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   SUNY Albany
  • 被引频次:   2
  • DOI:   10.1016/j.carbon.2017.09.074
  • 出版年:   2018

▎ 摘  要

Interlayer carrier scattering hampers electrical conduction in two-dimensional layered nanostructures. Extenuated carrier scattering is observed in a double-layered graphene system with hexagonal boron nitride (h-BN) as an interposer. Raman spectrum shows signature peaks with enhanced sharpness as compared with that of bilayer graphene. The density functional theory simulation shows degenerate energy bands in the E-k dispersion. The decoupling of the two graphene monolayers is further confirmed by electrical conduction measurements. Improved carrier mobility is observed in the graphene/h-BN/graphene heterostructure as compared with exfoliated or randomly-stacked graphene bilayer, indicating preserved Fermi velocity. The demonstrated behavior in graphene/h-BN/graphene heterostructure suggests a pathway to preserve the excellent carrier transport of pristine graphene monolayer in a multichannel configuration, leading to implementation of highly conductive 2D heterostructure systems. (C) 2017 Elsevier Ltd. All rights reserved.