▎ 摘　　要

We prepared magnetic thin films Ni81Fe19 on single-crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni81Fe19 and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19 thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni81Fe19/graphene/Si(001) heterostructure increased to 477 emu/cm(3) with annealing temperature T-a = 400 degrees C, which is much higher than values of Ni81Fe19/Si(001) heterostructures with T-a ranging from 200 degrees C to 400 degrees C.