• 文献标题:   188 ns pulsed Ho:Sc2SiO5 laser operating at 2107.2m employing a few-layer graphene saturable absorber
  • 文献类型:   Article
  • 作  者:   LIU XY, WANG ZC, ZHANG JQN
  • 作者关键词:   passive qswitched, graphene, ho:sc2sio5 sso crystal, 2 mu m
  • 出版物名称:   OPTIK
  • ISSN:   0030-4026 EI 1618-1336
  • 通讯作者地址:   Shanghai Maritime Univ
  • 被引频次:   0
  • DOI:   10.1016/j.ijleo.2020.164637
  • 出版年:   2020

▎ 摘  要

A passively Q-switched Ho:Sc2SiO5 laser operating at 2107.2 nm with a few layered graphene saturable absorber is obtained, corresponding to a beam quality factors ofM(x)(2)=1.19 andM(y)(2) =1.21. A maximum average output power of 1.37 W and pulse energy of 16.08 mu J was achieved at an incident pump power of 13.2 W. The shortest pulse width of 188.3 ns and maximum pulse repetition rate of 85.26 kHz were observed, with a maximum peak power of 85.4 W.