• 文献标题:   Genesis of magnetism in graphene/MoS2 van der Waals heterostructures via interface engineering using Cr-adsorption
  • 文献类型:   Article
  • 作  者:   SINGLA R, KUMAR S, HACKETT TA, RESHAK AH, KASHYAP MK
  • 作者关键词:   dft, nanomagnetism, 2d heterostructure, graphene, mos2
  • 出版物名称:   JOURNAL OF ALLOYS COMPOUNDS
  • ISSN:   0925-8388 EI 1873-4669
  • 通讯作者地址:  
  • 被引频次:   33
  • DOI:   10.1016/j.jallcom.2020.157776 EA JAN 2021
  • 出版年:   2021

▎ 摘  要

Graphene/MoS2 heterostructure (G/MS-H) has distinctive and superlative electronic properties as it contains features of both graphene and MoS2. Our first-principles calculations reveal this heterostructure has a little bandgap (40 meV) and zero magnetic moment in the pristine form. In the present work, we have attempted to induce magnetism in the resultant heterostructure by adsorbing Cr atom at (i) Top (G-Top) (ii) Hollow (G-Hollow) configurations in the graphene layer and (iii) Top (S-Top) and (iv) Hollow (S-Hollow) in the MoS2 layer. However, only G-Top and S-Hollow are energetically favorable amid these configurations. Our results demonstrate that Cr-adsorption persuades the significant magnetic moment. Both the stable configurations (G-Top and S-Hollow) transpire metallicity with a Dirac point shift in the valence band. The magnetism originates from the interactions between Cr-3d states with C-2p and S-3p states. These results summarize that the resultant adsorbed heterostructure may serve as a phenomenal breakthrough for nanomagnetism. (C) 2020 Elsevier B.V. All rights reserved.