• 文献标题:   Preparation of conductive film via a low temperature synthesis that enables simultaneous nitrogen doping and reduction of graphene oxide
  • 文献类型:   Article
  • 作  者:   BHATTACHARYYA T
  • 作者关键词:   graphene oxide, onepot reduction, nitrogen doping, electrical conductivity
  • 出版物名称:   MATERIALS RESEARCH EXPRESS
  • ISSN:   2053-1591
  • 通讯作者地址:   Ulsan Natl Inst Sci Technol
  • 被引频次:   3
  • DOI:   10.1088/2053-1591/aa85d8
  • 出版年:   2017

▎ 摘  要

A low temperature (-78 degrees C), one-pot synthesis that enables the simultaneous reduction of graphene oxide (G-O) and nitrogen doping of reduced graphene oxide (rG-O) is described. The method facilitates the effective removal of oxygen-containing functional groups in the G-O and introduces both 'graphitic' and 'pyridinic' nitrogen up to 4% in the corresponding product. The N-doped materials displayed relatively high powder electrical conductivities (up to 2.5 x 10(3) S m(-1)).