▎ 摘　　要

Highly bendable graphene field-effect transistors are fabricated on polyimide films. The device offers robust performance against various conditions including immersion in liquids, and dynamic loading tests, which are hazardous to conventional electronics. Bendability of the sample is tested with the bending radius of down to 1.3 mm; the devices remain fully functional with less than 8.7% reduction and no reduction in the electron and hole mobility after repeated bending tests, respectively. Multi-finger electrodes are implemented on flexible substrates to enhance its current drive. Silicon-nitride passivation offers efficient chemical protection over diverse liquids and robust mechanical protection against impacts. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772541]