▎ 摘　　要

Producing semi-transparent electrically conducting films are more necessary because of their extensive applications in industry and research. Here, the influences of Graphene oxide (GO) doping onto tin dioxide thin (SnO2) films are studied to be used in photovoltaic applications. The effect of GO doping concentration on the structural, optical and electrical properties of SnO2 thin films has been studied. The optical transmittance spectra of these films showed a high transparence value more than 80% in the visible region. The third-order nonlinear susceptibility chi((3)()) and nonlinear refractive index n(2) of the pure and GO doped SnO2 thin films have been increased with increasing the GO doping concentration. A surprise results show that a sheet resistance of prepared films was decreased from 362 to 26 Omega as a doping ration increased from 0 to 7.5 wt %. Moreover, the high value of figure of merit of films has been obtained when the doping ratio equal 7.5 wt %. (C) 2018 Elsevier B.V. All rights reserved.