• 文献标题:   Interface structure of epitaxial graphene grown on 4H-SiC(0001)
  • 文献类型:   Article
  • 作  者:   HASS J, MILLANOTOYA JE, FIRST PN, CONRAD EH
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   74
  • DOI:   10.1103/PhysRevB.78.205424
  • 出版年:   2008

▎ 摘  要

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (similar to 1.7 A compared to 0.63 A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (0001) surface, as predicted previously by ab initio calculations.