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  • 文献标题:   Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
  • 文献类型:   Article
  • 作　　者:   CHANG KC, ZHANG R, CHANG TC, TSAI TM, LOU JC, CHEN JH, YOUNG TF, CHEN MC, YANG YL, PAN YC, CHANG GW, CHU TJ, SHIH CC, CHEN JY, PAN CH, SU YT, SYU YE, TAI YH, SZE SM
  • 作者关键词:   conduction, graphene oxide, hopping, redox reaction, resistance random access memory rram
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Natl Sun Yat Sen Univ
  • 被引频次:   49
  • DOI:   10.1109/LED.2013.2250899
  • 出版年:   2013

▎ 摘　　要

In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.