▎ 摘　　要

In this paper, we investigate the valley-dependent electron transport in graphene modulated by a strained barrier which can induce a large valley polarization in this structure. Our results show that the valley polarization can be easily controlled by changing the strength, the position and/or the width of the strained barrier. This remarkable feature could be used in the fabrication of valleytronic devices based on graphene controlled by the strained barrier.