• 文献标题:   Graphene field effect devices operating in differential circuit configuration
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   NYFFELER C, HANAY MS, SACCHETTO D, LEBLEBICI Y
  • 作者关键词:   graphene, fet, differential signaling
  • 出版物名称:   MICROELECTRONIC ENGINEERING
  • ISSN:   0167-9317 EI 1873-5568
  • 通讯作者地址:   Ecole Polytech Fed Lausanne
  • 被引频次:   0
  • DOI:   10.1016/j.mee.2015.03.012
  • 出版年:   2015

▎ 摘  要

We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam lithography along with other semiconductor manufacturing processes. These devices were then systematically measured in an automated setup and their DC characteristics analyzed in terms of a simple but effective analytical model. This model together with the collected data allowed us to proceed further with both mathematical analysis of circuit characteristics as well as numerical simulation in a dedicated circuit analysis software. (C) 2015 Elsevier B.V. All rights reserved.