• 文献标题:   3D graphene-like semiconductor Ba-2 HfTe4 with electronic structure similar to graphene and bandgap close to silicon
  • 文献类型:   Article
  • 作  者:   DU J, SHI JJ
  • 作者关键词:  
  • 出版物名称:   CELL REPORTS PHYSICAL SCIENCE
  • ISSN:  
  • 通讯作者地址:  
  • 被引频次:   1
  • DOI:   10.1016/j.xcrp.2021.100658 EA DEC 2021
  • 出版年:   2021

▎ 摘  要

Opening the graphene zero bandgap and simultaneously keeping its linear electronic dispersion has been widely accepted as a very challenging scientific puzzle. Moreover, one of the biggest obstacles for all-perovskite tandem solar cells is the lack of perovskite semiconductors with a narrow bandgap (<1.2 eV). Here we examine these two issues and theoretically identify the environmentally friendly perovskite A(2)HfTe(4) (A = Ca, Sr, Ba), especially Ba2HfTe4 . This material is a good candidate for three-dimensional graphene-like semiconductors with two-dimensional electronic dimensionality, linear band-edge dispersion, a direct bandgap of 0.77-0.96 eV, carrier effective mass and mobility similar to graphene, visiblelight absorption beyond Pb-based perovskites, and power conversion efficiency approaching similar to 28%. A(2)HfTe(4) is a promising bottom-cell material that helps achieve all-perovskite tandem solar cells thanks to its narrow bandgap and acts as a potential alternative to the currently popular perovskite-silicon tandem solar cells.