▎ 摘　　要

We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO2/Si. Carbon ions were bombarded at 20 keV and a dose of 1 x 10(15) cm(-2) onto the surface of the Ni/SiO2/Si substrate at a temperature of 500 degrees C. This was followed by high-temperature activation annealing (600-900 degrees C) to form a sp(2)-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics. (C) 2015 AIP Publishing LLC.