▎ 摘　　要

We report on the manipulation of the fluorescence quenching of Rhodamine 6G (R6G) on graphene by defect engineering via hydrogen and Ar+ plasma treatments. The amount and nature of defects in graphene were estimated on the basis of the Raman intensity ratios I(D)/I(G) and I(D)/I(D') of graphene. Results showed that the quenching factor (QF) gradually decreases from similar to 40 to similar to 4 and similar to 12 for hydrogenated graphene (sp(3) defects) and Ar+-plasma-treated graphene (vacancy-like defects), respectively, with different amounts of defects. Our results indicated that the fluorescence quenching efficiency of graphene is strongly dependent on the amount and nature of defects. (C) 2016 The Japan Society of Applied Physics.