▎ 摘　　要

We present an approach to mass produce high-quality graphene on insulator substrate. Ni dots with single or few grains were achieved by annealing. Electron backscattered diffraction indicated that almost all of the Ni dots had (111) surface that is parallel to the substrate. Single-layer graphene with good crystalline quality has been grown on Ni dots. The patterned graphene films were transferred to insulating substrates by wafer bonding and etch back technique, which resulted in zero misalignment, low contamination, and high yield (> 90%). Graphene-based field-effect transistors with self-aligned gate were fabricated with this method, which demonstrate the potential of this method as a candidate for mass production of graphene transistors.