▎ 摘　　要

Based on the influence of edge effect and channel shape, two new graphene nanoribbon field effect transistors are presented being useful in high-voltage and highly sensitive optical applications. We fabricated and examined our devices under different conditions. It is seen that by choosing the proper channel shape, ionization rate and breakdown voltage could be improved compared to a normal rectangular device. We report nearly 11 and 19 % improvements in breakdown voltage and ionization rate of graphene nanoribbon field effect transistors (GNRFET), respectively.