• 文献标题:   Tunneling conductance in gapped graphene-based normal metal-insulator-superconductor junctions: Case of massive Dirac electrons
  • 文献类型:   Article
  • 作  者:   GOUDARZI H, SEDGHI H, KHEZERLOU M, MABHOUTI K
  • 作者关键词:   gapped graphene, tunneling conductance, massive dirac electron, specular andreev reflection
  • 出版物名称:   PHYSICA CSUPERCONDUCTIVITY ITS APPLICATIONS
  • ISSN:   0921-4534 EI 1873-2143
  • 通讯作者地址:   Urmia Univ
  • 被引频次:   4
  • DOI:   10.1016/j.physc.2010.08.010
  • 出版年:   2010

▎ 摘  要

We study the quantum transport property in a gapped graphene-based normal metal-insulator-superconductor junctions (NG/IG/SG), in the limit of a thin barrier. The charged fermions in NG/IG/SG structure are treated as massive relativistic particles. Based on Andreev and normal reflections in normal-superconductor graphene-based junction and BTK formalism, the tunneling conductance's in terms of some different electrostatic superconductor. U-0 and barrier, V-0 potential are obtained. Using the experimental based values of the Fermi energy in the NG and SG (E-FN and E-FN + U-0, respectively), energy gap in graphene (2mv(F)(2)) and superconducting order parameter, Delta, it is shown that the conductance spectra of such system represent a new behavior, i.e. if we take vertical bar E-FN - mv(F)(2)vertical bar -> 0, it becomes as a step function of V-0. This behavior of charge transportation can be considered as a nano switch. (C) 2010 Elsevier B.V. All rights reserved.