▎ 摘　　要

Despite many excellent properties, the synthesis of high quality graphene with low-cost way is still a challenge, thus many different factors have been researched. In this work, the effect of surface roughness to the graphene quality was studied. Graphene was synthesized by plasma enhanced chemical vapor deposition (PECVD) method on copper substrates with different roughness from 0.074 mu m to 0.339 mu m, which were prepared via annealing, corrosion or polishing, respectively. Ar+ plasma cleaning was applied before graphene growth in order to accommodate similar surface chemical reactivity to each other. Scanning electron microscope and Raman spectroscope were employed to investigate the effect of surface roughness, which reveals that the graphene quality decrease first and then increase again according to the ratio of I-D/I-G in Raman spectroscopy. When the ratio of I-D/I-G reaches the largest number, the substrate roughness is 0.127 mu m, where is the graphene quality changing point. First principle calculation was applied to explain the phenomenon and revealed that it is strongly affected by the graphene grain size and quantity which can induce defects. This strategy is expected to guide the industrial production of graphene.