• 文献标题:   Polymeric semiconductor/graphene hybrid field-effect transistors
  • 文献类型:   Article
  • 作  者:   HUANG J, HINES DR, JUNG BJ, BRONSGEEST MS, TUNNELL A, BALLAROTTO V, KATZ HE, FUHRER MS, WILLIAMS ED, CUMINGS J
  • 作者关键词:   organic semiconductor, graphene, thin film transistor, hybrid material
  • 出版物名称:   ORGANIC ELECTRONICS
  • ISSN:   1566-1199 EI 1878-5530
  • 通讯作者地址:   Univ Maryland
  • 被引频次:   51
  • DOI:   10.1016/j.orgel.2011.05.021
  • 出版年:   2011

▎ 摘  要

Solution processed organic field-effect transistors (OFETs) usually have high on/off ratios but suffer from low mobilities, while transistors based on graphene usually exhibit very high mobilities but low on/off ratios. We demonstrate a straightforward route to solve the challenging problem of enhancing the effective mobility in OFETs while keeping the on/off ratio sufficiently high. We achieve this by developing hybrid FETs incorporating both organic semiconductors and graphene. Compared against OFETs with only pure organic semiconductors, our hybrid FETs exhibit up to 20 times higher effective mobilities, and yet they keep the on/off ratios comparable or better. P3HT/graphene hybrid FETs exhibit mobility as high as 0.17 cm(2) V (1) s (1), and PQT-12/graphene hybrid FETs show effective mobility up to 0.6 cm(2) V (1) s (1). We expect that incorporating graphene is a general route to enhance the performance of OFETs, providing a low-cost avenue for enhancing OFET performance. (C) 2011 Elsevier B.V. All rights reserved.