▎ 摘　　要

We have investigated the room temperature long channel field effect characteristics of a single graphene layer transistor incorporating a poly-4-vinyl-phenol (PVP) organic insulating layer, as an alternative to conventional oxide gate dielectric materials. High purity copper foils were used in the chemical vapour growth of the graphene layer and visible Raman analysis confirmed the presence of a high quality monolayer carbon film. Using a channel length of 50 mu m, a field effect hole mobility of 37 cm(2)/Vs was calculated, which demonstrates the possibility of an all carbon graphene based large area transistor with carrier mobilities above those found in conventional long channel all organic electronic transistors. (C) 2011 Elsevier B.V. All rights reserved.