• 文献标题:   Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001)
  • 文献类型:   Article
  • 作  者:   SUN GF, JIA JF, XUE QK, LI L
  • 作者关键词:  
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   81
  • DOI:   10.1088/0957-4484/20/35/355701
  • 出版年:   2009

▎ 摘  要

Ridges are observed on epitaxial graphene on 6H-SiC(0001) by scanning tunneling microscopy (STM). Atomic resolution imaging reveals that they are in fact bulged regions of the graphene layer, occurring as a result of bending and buckling to relieve the compressive strain. Furthermore, their length, direction, and distribution can be manipulated, and new ones can even be created by the tip-surface interactions during STM imaging. The lower limit of terrace size for ridge formation is estimated to be similar to 80 nm, and nearly ridge-free graphene film can be obtained on vicinal 3.5 degrees miscut substrates.