▎ 摘　　要

One of the great challenges for digital graphene electronics is producing graphene field effect transistors with an energy band gap. Latest experimental research has shown that etching nanomesh into graphene is an appropriate solution to transform semi-metallic graphene into semiconducting graphene. Substrate roughness, inhomogeneous charge density (electron-hole puddles) and charged impurities across the graphene channel at low gate voltages have caused low-quality performance in graphene field effect transistors realized on SiO2 substrates. Presence of electron-hole puddles for graphene nanomesh (GNM) on different substrates and their effect on the electrical performance of back-gated field effect transistors (BG-FET) is focused in this study. Back-gated FET with bandgap engineered GNM as a channel material from micron to nanometer length scales with different substrates such as SiO2 and hexagonal boron nitride (h-BN) has been simulated here. Recently published experiments on GNM FETs agreed with simulations performed using drift-diffusion-mode space approach. Enhanced /(ON)//(OFF) current ratio and current saturation have shown that the presence of h-BN substrate and transport gaps have significantly improved the electrical characteristics of the back-gated graphene nanomesh field effect transistors (BG-GNMFETs). These results pave way for digital applications of semiconducting graphene.