▎ 摘　　要

Controllable nitrogen doping is an effective way to regulate the electronic properties of graphene and further to facilitate its wider application. However, the synthesis of high-quality nitrogen-doped graphene (NG) with a controllable nitrogen configuration still faces considerable challenges. In this work, we present for the first time a simple method for the one-step synthesis of NG with ionic liquids (ILs) as precursors, which avoids the defects introduced by secondary doping and simplifies the process. Using 1-Ethyl-3-methylimidazolium dicyanamide (EMIM-dca) as the precursor, we obtained a high-quality NG with few defects (I-D/I-G is 0.83), nitrogen content (4.11 at%), and graphite-N proportion of 92% at a growth temperature of 1000 degrees C and field effect transistors (FETs) fabricated on SiO2/Si substrates using the NG exhibited typical n-type semiconductor behavior in air. Our findings bring more inspiration for the controllable growth of high-quality graphitic N-doped graphene, thereby promoting its application possibilities in numerous fields.